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          首頁(yè) >MRF>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MRF1000MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: ? Class A Operation ? PG = 10 dB at 0.2 W/1090 MHz ? Omnigold? Metalization System

          文件:16.37 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF1000MB

          Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

          Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features ? Guaranteed performance @ 1090 MHz, 18 Vdc — Class A ? Output power: 0.2W ? Minimum gain: 10dB ? 100 tested

          文件:170.22 Kbytes 頁(yè)數(shù):4 Pages

          MA-COM

          MRF1000MB

          MICROWAVE POWER TRANSISTORS NPN SILICON

          Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. ? Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Pha

          文件:104.81 Kbytes 頁(yè)數(shù):4 Pages

          MACOM

          MRF1001

          RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

          DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features ? Silicon NPN, To-39 packaged VHF/UHF Transistor ? Ftau = 3.0 Ghz (typ) @ 30

          文件:200.36 Kbytes 頁(yè)數(shù):4 Pages

          MICROSEMI

          美高森美

          MRF1001A

          NPN SILICON HIGH FREQUENCY TRANSISTOR

          DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

          文件:68.96 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF1001A

          ELECTRICAL SPECIFICATIONS (Tease - 25?C)

          ELECTRICAL SPECIFICATIONS (Tease - 25°C)

          文件:82.65 Kbytes 頁(yè)數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MRF1001A

          RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

          DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features ? Silicon NPN, To-39 packaged VHF/UHF Transistor ? Ftau = 3.0 Ghz (typ) @ 30

          文件:200.36 Kbytes 頁(yè)數(shù):4 Pages

          MICROSEMI

          美高森美

          MRF1002

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested

          文件:109.38 Kbytes 頁(yè)數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF1002MA

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested

          文件:109.38 Kbytes 頁(yè)數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF1002MB

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested

          文件:109.38 Kbytes 頁(yè)數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          晶體管資料

          • 型號(hào):

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號(hào):

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

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          更多MRF供應(yīng)商 更新時(shí)間2026-1-19 8:31:00
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