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          首頁(yè) >MRF>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MRF1002MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: ? Class C Operation ? PG = 9.0 dB at 2.0 W/1150 MHz ? Omnigold? Metalization System

          文件:33.36 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF10031

          Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

          Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features ? Guaranteed performance @ 960-1215MHz, 36Vdc ? Output power: 30W peak ? Minimum gain: 9.0dB min., 9.5dB typ. ? 100 tested for load mi

          文件:195.44 Kbytes 頁(yè)數(shù):5 Pages

          MA-COM

          MRF10031

          MICROWAVE POWER TRANSISTOR

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:101.2 Kbytes 頁(yè)數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10031

          MICROWAVE POWER TRANSISTOR NPN SILICON

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:163.59 Kbytes 頁(yè)數(shù):4 Pages

          MACOM

          MRF10031

          Microwave Long Pulse Power Transistor

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:157.34 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MRF1004

          MICROWAVE POWER TRANSISTORS NPN SILICON

          Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

          文件:101.55 Kbytes 頁(yè)數(shù):5 Pages

          MACOM

          MRF1004

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:19.74 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF1004MA

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:19.74 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF1004MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:16.55 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MRF1004MB

          Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz

          Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB ? 100 Tested for load mismatch at all phase angles with 10:1 VSWR ?

          文件:170.24 Kbytes 頁(yè)數(shù):5 Pages

          MA-COM

          晶體管資料

          • 型號(hào):

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號(hào):

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類(lèi)別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          更多MRF供應(yīng)商 更新時(shí)間2026-1-18 9:01:00
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