| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件:87.62 Kbytes 頁數(shù):7 Pages | MITSUBISHI 三菱電機 | MITSUBISHI |
技術(shù)參數(shù)
- Organization (Kword):
512
- Organization(bit):
x 36
- Package Type:
TQFP(100)
- I/O voltage (VDDQ):
3.3/2.5
- Supply voltage (V):
2.375 to 2.625/3.135 to 3.465
- Operating temperature (°C):
0 to 70
- Production Status:
EOL
- Clock frequency (Hz):
167
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MIT |
25+ |
DIP28 |
4500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
150 |
全新原裝 貨期兩周 |
詢價 | |||
MIT |
24+ |
BGA |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
MITSUMI |
25+ |
TSOP |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
MITSUBISHI |
2018+ |
SOP/DIPQFP |
140 |
原裝假一賠十 |
詢價 | ||
MIT |
24+ |
(SOP) |
2650 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MIT |
24+ |
DIP |
18700 |
詢價 | |||
RENESAS |
24+ |
TSOP |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
RENESAS |
TSOP-44 |
50000 |
詢價 | ||||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗原裝進口正品,做服務(wù)型企業(yè) |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074

