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    首頁 >M5M5>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    M5M51008BVP-15VLL

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

    文件:68.53 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008BVP-70VL

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

    文件:68.53 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008BVP-70VLL

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

    文件:68.53 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CCP-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CCP-55X

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CCP-70H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CCP-70X

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CFP

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CFP-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    M5M51008CFP-55X

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

    文件:87.62 Kbytes 頁數(shù):7 Pages

    MITSUBISHI

    三菱電機

    技術(shù)參數(shù)

    • Organization (Kword):

      512

    • Organization(bit):

      x 36

    • Package Type:

      TQFP(100)

    • I/O voltage (VDDQ):

      3.3/2.5

    • Supply voltage (V):

      2.375 to 2.625/3.135 to 3.465

    • Operating temperature (°C):

      0 to 70

    • Production Status:

      EOL

    • Clock frequency (Hz):

      167

    供應(yīng)商型號品牌批號封裝庫存備注價格
    MIT
    25+
    DIP28
    4500
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    MIT
    24+
    (SOP)
    2650
    原裝現(xiàn)貨假一罰十
    詢價
    MITSUBISHI
    2025+
    SOP-32
    3550
    全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
    詢價
    RENESAS
    24+
    TSOP
    5000
    全現(xiàn)原裝公司現(xiàn)貨
    詢價
    MIT
    TSSOP3
    06+
    39
    全新原裝進口自己庫存優(yōu)勢
    詢價
    MITSUBIS
    QQ咨詢
    DIP
    834
    全新原裝 研究所指定供貨商
    詢價
    MITSUBISHI
    23+
    DIP-22
    3880
    正品原裝貨價格低
    詢價
    MITSUBISHI/三菱電機
    24+
    SOP
    3000
    全新原裝現(xiàn)貨 優(yōu)勢庫存
    詢價
    MITSUBISHI
    23+
    TSOP-28
    65600
    詢價
    RENESAS/瑞薩
    20+
    QFP-100
    580
    進口原裝現(xiàn)貨,假一賠十
    詢價
    更多M5M5供應(yīng)商 更新時間2026-1-22 9:08:00

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