| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI |
技術(shù)參數(shù)
- Organization (Kword)：
512
- Organization(bit)：
x 36
- Package Type：
TQFP(100)
- I/O voltage (VDDQ)：
3.3/2.5
- Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
- Operating temperature (°C)：
0 to 70
- Production Status：
EOL
- Clock frequency (Hz)：
167
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MIT |
24+ |
BGA |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
MIT |
25+ |
DIP28 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
HIT |
2023+ |
FBGA |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
MITSUBIS |
07+ |
SOP32 |
30 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) | ||
MITSUBISHI |
2025+ |
SOP-32 |
3550 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
MIT |
23+ |
TSOP |
8000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
RENESAS |
22+ |
TSOP32 |
20000 |
公司只做原裝 品質(zhì)保障 |
詢價(jià) | ||
MITSUBIS |
QQ咨詢 |
DIP |
834 |
全新原裝 研究所指定供貨商 |
詢價(jià) | ||
MIT |
20+ |
TSSOP52 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
MITSUBISHI |
9802 |
93 |
優(yōu)勢(shì)貨源原裝正品 |
詢價(jià) |
相關(guān)規(guī)格書
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- SI7946DP
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- SE1
- PI7C8150B
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- TD62308
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