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    首頁 >M5M5>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    M5M51008DFP-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:70.54 Kbytes 頁數(shù):8 Pages

    MITSUBISHI

    三菱電機

    M5M51008DFP-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    M5M51008DFP-70H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:70.54 Kbytes 頁數(shù):8 Pages

    MITSUBISHI

    三菱電機

    M5M51008DFP-70H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    M5M51008DKR

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    M5M51008DKR-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:70.54 Kbytes 頁數(shù):8 Pages

    MITSUBISHI

    三菱電機

    M5M51008DKR-55H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    M5M51008DKR-70H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:70.54 Kbytes 頁數(shù):8 Pages

    MITSUBISHI

    三菱電機

    M5M51008DKR-70H

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    M5M51008DKV

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

    DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

    文件:120.04 Kbytes 頁數(shù):9 Pages

    RENESAS

    瑞薩

    技術(shù)參數(shù)

    • Organization (Kword):

      512

    • Organization(bit):

      x 36

    • Package Type:

      TQFP(100)

    • I/O voltage (VDDQ):

      3.3/2.5

    • Supply voltage (V):

      2.375 to 2.625/3.135 to 3.465

    • Operating temperature (°C):

      0 to 70

    • Production Status:

      EOL

    • Clock frequency (Hz):

      167

    供應(yīng)商型號品牌批號封裝庫存備注價格
    MITSUBISHI/三菱電機
    24+
    SOP
    3000
    全新原裝現(xiàn)貨 優(yōu)勢庫存
    詢價
    MIT
    25+
    SOP28
    9
    就找我吧!--邀您體驗愉快問購元件!
    詢價
    RENESAS/瑞薩
    25+
    SOP28
    860000
    明嘉萊只做原裝正品現(xiàn)貨
    詢價
    RENESAS/瑞薩
    25+
    SSOP28
    11500
    原裝現(xiàn)貨,價格優(yōu)勢
    詢價
    MITSUBISHI/三菱
    99+00+
    SOP28
    143
    原裝現(xiàn)貨
    詢價
    MITSUBISHI/三菱
    24+
    SOP-32
    60000
    詢價
    RENESAS
    22+
    TSOP32
    5000
    只做原裝鄙視假貨15118075546
    詢價
    MINI
    24+
    SMD其他電子元
    17
    一級代理全新原裝現(xiàn)貨
    詢價
    MIT
    22+
    TSSOP
    3000
    原裝正品,支持實單
    詢價
    RNENSAS
    23+
    TSOP
    429
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價
    更多M5M5供應(yīng)商 更新時間2026-1-22 15:23:00

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