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                >M5M5>規(guī)格書列表
                
    
            
    
                
    
                    
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    M5M51008CFP-70H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CFP-70X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKV
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKV-55H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Organization (Kword)：
      512
    • Organization(bit)：
      x 36
    • Package Type：
      TQFP(100)
    • I/O voltage (VDDQ)：
      3.3/2.5
    • Supply voltage (V)：
      2.375 to 2.625/3.135 to 3.465
    • Operating temperature (°C)：
      0 to 70
    • Production Status：
      EOL
    • Clock frequency (Hz)：
      167
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
    
                
    



    MITSUBISHI
    		

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詢價(jià)
    

    



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詢價(jià)
    

    



    MIT
    		

    25+
    		

    SOP28
    		

    9
    		

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            更新時(shí)間2026-1-22 8:02:00
        
    
        
    
          
    
            
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