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          M5M51008BFP-70VLL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-10VL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-10VLL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-12VL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-12VLL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-15VL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-15VLL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-70VL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKR-70VLL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008BKV-10VL
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T
          文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Organization (Kword)：
            512
          • Organization(bit)：
            x 36
          • Package Type：
            TQFP(100)
          • I/O voltage (VDDQ)：
            3.3/2.5
          • Supply voltage (V)：
            2.375 to 2.625/3.135 to 3.465
          • Operating temperature (°C)：
            0 to 70
          • Production Status：
            EOL
          • Clock frequency (Hz)：
            167
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          MIT
          		

          24+
          		

          (SOP)
          		

          2650
          		

          原裝現(xiàn)貨假一罰十
          		
詢價(jià)
          

          



          MIT
          		

          25+
          		

          DIP28
          		

          4500
          		

          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          		
詢價(jià)
          

          



          MIT
          		

          22+
          		

          DIP-28(大體)
          		

          3000
          		

          原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
          		
詢價(jià)
          

          



          MITSUBISHI
          		

          2018+
          		

          SOP/DIPQFP
          		

          140
          		

          原裝假一賠十
          		
詢價(jià)
          

          



          MIT
          		

          24+
          		

          BGA
          		

          6980
          		

          原裝現(xiàn)貨,可開13%稅票
          		
詢價(jià)
          

          



          MITSUBISHI
          		

          25+
          		

          QFP
          		

          1000
          		

          強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
          		
詢價(jià)
          

          



          NA
          		

          23+
          		

          NA
          		

          26094
          		

          10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
          		
詢價(jià)
          

          



          RENESAS/瑞薩
          		

          2022+
          		

          		

          150
          		

          全新原裝 貨期兩周
          		
詢價(jià)
          

          



          RENESAS
          		

          23+
          		

          NA
          		

          19854
          		

          專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品
          		
詢價(jià)
          

          



          MITSUMI
          		

          25+
          		

          TSOP
          		

          2987
          		

          只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來電!
          		
詢價(jià)
          

            
          
        
          
        
          更多M5M5供應(yīng)商
            更新時(shí)間2026-1-20 13:30:00
        
          
        
          
          
          
            
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