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          首頁 >ISP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          ISPD02N60C3

          絲印:DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.01 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD02N60S5

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.18 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD02N80C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤2.7? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.49 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD03N50C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.4? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.54 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD03N60C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? High peak current capability ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.4? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.42 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD03N60S5

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.4? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.44 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD04N50C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.95? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.63 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD04N60C3

          絲印:DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? High peak current capability ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.95? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.69 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD04N80C3

          絲印:DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.58 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          ISPD06N60C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.75? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:336.42 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • VDS (min)(V):

            800

          • ID(A):

            4

          • RDS(on)(typ)(@10V):

            2.2

          • RDS(on)(max)(@10V):

            2.8

          • Qg(typ)(nC):

            25

          • Ciss(typ)(pF):

            865

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          QFP
          1068
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          更多ISP供應(yīng)商 更新時間2026-1-21 16:14:00
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