絲印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤2.7? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.49 Kbytes 頁數(shù)：2 Pages

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Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：261.72 Kbytes 頁數(shù)：12 Pages

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CoolMOSTM Power Transistor

文件：374.83 Kbytes 頁數(shù)：10 Pages

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CoolMOSTM Power Transistor

文件：440.34 Kbytes 頁數(shù)：10 Pages

INFINEON

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