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          首頁(yè) >ISPD02N60S5>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          ISPD02N60S5

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.18 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          ISPP02N60S5

          N-Channel MOSFET Transistor

          ? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an

          文件:337.66 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPB02N60S5

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance

          文件:306.41 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          SPB02N60S5

          Cool MOS??Power Transistor Feature New revolutionary high voltage technology

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Qualified according to JEDEC0) for target applications

          文件:349.26 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

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          更多ISPD02N60S5供應(yīng)商 更新時(shí)間2026-1-19 18:21:00
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