絲印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.58 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRIPTION ? High peak current capability ? Ultra low gate charge ? Ultra low effective capacitances ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤1.3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device

文件：339.44 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOSTM Power Transistor

文件：375.96 Kbytes 頁數(shù)：10 Pages

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英飛凌

Cool MOS??Power Transistor

Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances CoolMOSTM 800V designed for:

文件：250.47 Kbytes 頁數(shù)：12 Pages

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英飛凌