絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.95? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.63 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRITION ? Ultra low gate charge ? Improved transcondutance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.95? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.51 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：292.69 Kbytes 頁數(shù)：13 Pages

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英飛凌

Cool MOS Power Transistor

文件：11.43318 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌