| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET VDSS = 200V RDS(on) = 0.40? ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of 文件:1.55025 Mbytes 頁數(shù):9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip 文件:1.65092 Mbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET
文件:247.41 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件:895.86 Kbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advanced Power MOSFET BVDSS = 200 V RDS(on) = 0.18? ID = 18 A FEATURES ? Logic-Level Gate Drive ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 20 文件:226.35 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )
文件:930.01 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
HEXFET-R POWER MOSFET
文件:271.5 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/irll110/marking.html">IRLL110;Package:SOT-223;100V N-Channel MOSFET FEATURES ? Surface mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance ?VDS(V) = 100V ?RDS(ON) 文件:694.08 Kbytes 頁數(shù):8 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲印:IRLR8726;Package:TO-252;N-Channel MOSFET Features VDS (V)=30V RDS(ON) 文件:479.65 Kbytes 頁數(shù):7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印:IRLR8726;Package:TO-252;N-Channel MOSFET Features VDS (V)=30V RDS(ON) 5.8m (VGS = 10V) RDS(ON) 8 m (VGS = 4.5V) Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use 文件:474.45 Kbytes 頁數(shù):7 Pages | UMW 友臺半導(dǎo)體 | UMW |
技術(shù)參數(shù)
- OPN:
IRL1004PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
40 V
- RDS (on) @10V max:
6.5 m?
- RDS (on) @4.5V max:
9 m?
- ID @25°C max:
130 A
- QG typ @4.5V:
66.7 nC
- Polarity:
N
- VGS(th) min:
1 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TRANSISTORMO |
25+ |
SMD2 |
2100 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
ir |
23+ |
9000 |
原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價 |
詢價 | |||
IOR |
24+ |
SMD |
2500 |
新 |
詢價 | ||
IR |
23+ |
TO-220 |
2870 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
24+ |
SOT23-3 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
SOT-23 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SOT-23 |
9544 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2016+ |
SOT-163 |
178000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |
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