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    首頁 >IRFR>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRFR120NTR

    The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

    Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

    文件:536.66 Kbytes 頁數(shù):7 Pages

    UMW

    友臺半導(dǎo)體

    IRFR120NTR

    MOSFET

    Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

    文件:466.21 Kbytes 頁數(shù):7 Pages

    EVVOSEMI

    翊歐

    IRFR120PBF

    IRFR120

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:1.70201 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFR120PBF

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:4.22483 Mbytes 頁數(shù):7 Pages

    KERSEMI

    IRFR120TR

    IRFR120

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:1.70201 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFR120TR

    HEXFET POWER MOSFET

    DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Surface Mount (IRFR120) ? Str

    文件:179.46 Kbytes 頁數(shù):6 Pages

    IRF

    IRFR120TRL

    Dynamic dV/dt Rating

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:4.27848 Mbytes 頁數(shù):7 Pages

    KERSEMI

    IRFR120TRL

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:4.22483 Mbytes 頁數(shù):7 Pages

    KERSEMI

    IRFR120TRL

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:1.88411 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFR120TRL

    IRFR120

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:1.70201 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    技術(shù)參數(shù)

    • OPN:

      IRFR024NTRLPBF/IRFR024NTRPBF

    • Qualification:

      Non-Automotive

    • Package name:

      DPAK/DPAK

    • VDS max:

      55 V

    • RDS (on) @10V max:

      75 m?/75 m?

    • ID @25°C max:

      17 A/17 A

    • QG typ @10V:

      13.3 nC/13.3 nC

    • Polarity:

      N

    • VGS(th) min:

      2 V/2 V

    • VGS(th) max:

      4 V/4 V

    • VGS(th):

      3 V/3 V

    • Technology:

      IR MOSFET?/IR MOSFET?

    供應(yīng)商型號品牌批號封裝庫存備注價格
    IR
    22+
    SOT-252
    6000
    終端可免費供樣,支持BOM配單
    詢價
    IR
    23+
    SOT-252
    8000
    專注配單,只做原裝進口現(xiàn)貨
    詢價
    IR
    23+
    SOT-252
    7000
    詢價
    IR
    24+
    TO252
    65200
    一級代理/放心采購
    詢價
    VISHAY
    25+
    TO-252
    30000
    代理全新原裝現(xiàn)貨,價格優(yōu)勢
    詢價
    IR
    0548+
    TO252-2
    271
    原裝現(xiàn)貨海量庫存歡迎咨詢
    詢價
    IR
    23+
    SOT-252
    5000
    原裝正品,假一罰十
    詢價
    Infineon
    1931+
    N/A
    1642
    加我qq或微信,了解更多詳細信息,體驗一站式購物
    詢價
    IR
    23+
    NA
    2860
    原裝正品代理渠道價格優(yōu)勢
    詢價
    23+
    TO-252
    65480
    詢價
    更多IRFR供應(yīng)商 更新時間2026-1-22 14:00:00

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