| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFR010 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件：1.67749 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR010 | N-CHANNEL POWER MOSFET
文件：287.41 Kbytes 頁數(shù)：5 Pages | SAMSUNG 三星 | SAMSUNG | |
IRFR010 | Power MOSFET FEATURES ? Low drive current ? Surface-mount ? Fast switching ? Ease of paralleling ? Excellent temperature stability ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin 文件：325.95 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR010 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件：4.60859 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | |
IRFR010 | AVALANCHE AND dv/dt RATED
文件：275.94 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFR010 | isc N-Channel MOSFET Transistor 文件：320.94 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRFR010 | Power MOSFET Low drive current\nSurface-mount\nFast switching; | Vishay 威世 | Vishay | |
IRFR010 | AVALANCHE AND dv/dt RATED | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Low drive current ? Surface-mount ? Fast switching ? Ease of paralleling ? Excellent temperature stability ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin 文件：325.95 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件：1.67749 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFR010
- 功能描述：
MOSFET N-Chan 60V 7.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
SOT252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
IR |
24+ |
TO-3 |
200 |
詢價 | |||
IR |
05+ |
原廠原裝 |
4355 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
IR |
24+ |
原廠封裝 |
1836 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
三星 |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
SAMSUNG |
25+ |
TO-252 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
N_A |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
23+ |
65480 |
詢價 |
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