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          首頁(yè) >IRFL014NPBF>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRFL014NPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for

          文件:158.96 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFL014NPBF

          Advanced Process Technology

          文件:164.33 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFL014NPBF_15

          Advanced Process Technology

          文件:164.33 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFL014NTRPBF

          N-Channel Enhancement Mode Power MOSFET

          GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

          文件:1.92767 Mbytes 頁(yè)數(shù):5 Pages

          TECHPUBLIC

          臺(tái)舟電子

          IRFL014NTRPBF

          Advanced Process Technology

          Description Fifth Generation HEXFET? MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for

          文件:164.33 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFL014PBF

          Surface Mount, Fast Switching

          DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Surface Mount ? Available in Tape & Reel ? Dynamic dV/dt Rating ? Fast Switching ? Eas

          文件:793.5 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          詳細(xì)參數(shù)

          • 型號(hào):

            IRFL014NPBF

          • 功能描述:

            MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          IR
          24+
          SOT-223TO-261
          1760
          詢價(jià)
          IR
          25+
          SOT-223
          20
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          IR
          24+
          SOT-223
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
          詢價(jià)
          Infineon
          24+
          NA
          3021
          進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
          詢價(jià)
          IR
          25+
          SOT-223
          2987
          只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
          詢價(jià)
          IR
          23+
          SOT-223
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          IR
          25+23+
          SOT223
          40894
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          IR
          18+
          SOT-223
          85600
          保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
          詢價(jià)
          International Rectifier
          2022+
          2022
          全新原裝 貨期兩周
          詢價(jià)
          更多IRFL014NPBF供應(yīng)商 更新時(shí)間2026-1-18 13:00:00
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