0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling

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IRF

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

Infineon

英飛凌

HEXFET Power MOSFET

HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling ● Lead-Free

文件：1.75421 Mbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.56402 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET P-CH -200V HEXFET MOSFET

Vishay

威世