1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs

Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul

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HARRIS

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

5.0A and 6.0A, 60V-100V rDS(0n) = 0.30Ω and 0.40Ω Features: ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：165.85 Kbytes 頁數(shù)：5 Pages

GESS

isc N-Channel MOSFET Transistor

文件：320.83 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：344.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電