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          首頁 >IRFBC40>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFBC40ASTRRPBF

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive ?? requirement ? Improved gate, avalanche and dynamic dV/dt ?? ruggedness ? Fully characterized capacitance and avalanche ?? voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance ?? ple

          文件:342.98 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40L

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

          文件:984.33 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40L

          Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

          Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

          文件:350.66 Kbytes 頁數(shù):10 Pages

          IRF

          IRFBC40LC

          HEXFET-R POWER MOSFET

          HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

          文件:176.22 Kbytes 頁數(shù):8 Pages

          IRF

          IRFBC40LC

          Power MOSFET

          Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

          文件:148.34 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40LCPBF

          Power MOSFET

          Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

          文件:148.34 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40LPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

          文件:984.33 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBC40LPBF

          HEXFET? Power MOSFET

          Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

          文件:360.09 Kbytes 頁數(shù):10 Pages

          IRF

          IRFBC40PBF

          HEXFET POWER MOSFET (VDSS=600V , RDS(on)=1.2Ohm , ID=6.2A)

          DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of Paralleling ?

          文件:3.563 Mbytes 頁數(shù):7 Pages

          IRF

          IRFBC40PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

          文件:2.98806 Mbytes 頁數(shù):7 Pages

          KERSEMI

          詳細(xì)參數(shù)

          • 型號(hào):

            IRFBC40

          • 功能描述:

            MOSFET N-Chan 600V 6.2 Amp

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          25+
          TO-220
          20300
          IR原裝特價(jià)IRFBC40即刻詢購立享優(yōu)惠#長期有貨
          詢價(jià)
          VISHAY
          1515+
          TO-220
          100
          上傳都是百分之百進(jìn)口原裝現(xiàn)貨
          詢價(jià)
          IR
          23+
          TO-220
          2840
          原廠原裝正品
          詢價(jià)
          IR
          18+
          TO-220
          50
          只做原裝正品
          詢價(jià)
          IR
          24+
          TO 220
          161082
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          IR
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          ONSEMI
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          25+
          PLCC44
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IR
          05+
          TO-220
          10000
          全新原裝 絕對(duì)有貨
          詢價(jià)
          更多IRFBC40供應(yīng)商 更新時(shí)間2026-1-18 14:14:00
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