5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

N-CHANNEL POWER MOSFET

Features: ? Hermetic Low Profile TO-39 (TO-205AF) Metal Package. ? Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. ? Screening Options Available.

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TTELEC

N-CHANNEL ENHANCEMENT

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SEME-LAB

5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re ? 5.5A, 200V\n? rDS(ON) = 0.400?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount\n????? Components to PC Boar;

Renesas

瑞薩

HiRel MOSFETs

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Infineon

英飛凌

MOSFETs and JFETs

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