| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt 文件：147.97 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It 文件：362.05 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt 文件：147.97 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Surface-mount (IRFBC30S, SiHFBC30S) ? Low-profile through-hole (IRFBC30L, SiHFBC30L) ? Available in tape and reel (IRFBC30S, SiHFBC30S) ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of c 文件：310.37 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Surface-mount (IRFBC30S, SiHFBC30S) ? Low-profile through-hole (IRFBC30L, SiHFBC30L) ? Available in tape and reel (IRFBC30S, SiHFBC30S) ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of c 文件：310.37 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It 文件：362.05 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRFBC30
- 功能描述：
MOSFET N-Chan 600V 3.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2018+ |
TO-220 |
5000 |
全新原裝真實庫存含13點增值稅票！ |
詢價 | ||
IR |
05+ |
TO-220 |
7000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
24+/25+ |
30 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
25+ |
TO220 |
18600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IOR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
原廠 |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
原廠 |
24+ |
TO-220 |
2277 |
進口原裝正品優(yōu)勢供應 |
詢價 |
相關(guān)規(guī)格書
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- IRFBC30APBF
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- IRFBE30
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- IRFBF20PBF
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- IRFBF30PBF
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- IRFH4234TRPBF
- IRFH4253DTRPBF
- IRFH4255DTRPBF/BKN
- IRFH4257DTRPBF-CUTTAPE
