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          首頁(yè) >IRF830>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF830AS

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:242.75 Kbytes 頁(yè)數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830AS_V01

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:242.75 Kbytes 頁(yè)數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRL

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRLPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRLPBF

          N-Channel 6 50V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:2.23303 Mbytes 頁(yè)數(shù):10 Pages

          VBSEMI

          微碧半導(dǎo)體

          IRF830B

          500V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:1.61271 Mbytes 頁(yè)數(shù):9 Pages

          KERSEMI

          IRF830B

          Reduced capacitive switching losses

          FEATURES ? Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) ? Optimal efficiency and operation - Low cost - Simple gate drive circuitry

          文件:296.71 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830B

          500V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

          文件:888.87 Kbytes 頁(yè)數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF830F

          4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

          DESCRIPTION ? IRF830 is 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ? Advanced termination scheme to provide enhanced voltageblocking capability; ? Avalanche Energy Specified; ? Source-to-Drain Diode Recove

          文件:384.32 Kbytes 頁(yè)數(shù):7 Pages

          FS

          技術(shù)參數(shù)

          • PC:

            100

          • ID:

            4.5

          • VDSS:

            500

          • Vth(min):

            2.0

          • RDS:

            1.5

          • VGS(RDS):

            10

          • Package:

            TO-220

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INFINEON/英飛凌
          25+
          TO-220
          45000
          IR全新現(xiàn)貨IRF830即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂
          詢價(jià)
          ST
          11+
          TO-220
          62000
          原裝正品現(xiàn)貨優(yōu)勢(shì)18
          詢價(jià)
          FSC/仙童
          24+
          TO-220
          7512
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
          詢價(jià)
          VISHAY
          23+
          TO-220
          2800
          原廠原裝正品
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          VISHAY
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          INFINEON/英飛凌
          19+
          明嘉萊只做原裝正品現(xiàn)貨
          2510000
          TOP-220
          詢價(jià)
          ONSEMI
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          25+
          PLCC44
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IR
          06+
          TO-220
          7000
          全新原裝 絕對(duì)有貨
          詢價(jià)
          更多IRF830供應(yīng)商 更新時(shí)間2026-1-18 9:03:00
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