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          首頁 >IRF830>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF8302MPBF

          HEXFET Power MOSFET plus Schottky Diode

          Description The IRF8302MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET? package is compatible with existing layout

          文件:274.13 Kbytes 頁數(shù):9 Pages

          IRF

          IRF8304MPBF

          RoHS Compliant and Halogen Free

          Description The IRF8304MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET? package is compatible with existing lay

          文件:279.56 Kbytes 頁數(shù):9 Pages

          IRF

          IRF8306MPBF

          HEXFET Power MOSFET plus Schottky Diode

          Description The IRF8306MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:280.52 Kbytes 頁數(shù):9 Pages

          IRF

          IRF8306MTRPBF

          HEXFET Power MOSFET plus Schottky Diode

          Description The IRF8306MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:280.52 Kbytes 頁數(shù):9 Pages

          IRF

          IRF8308MPBF

          RoHs Compliant Containing No Lead and Bromide

          Description The IRF8308MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:277.13 Kbytes 頁數(shù):9 Pages

          IRF

          IRF8308MPBF

          RoHs Compliant Containing No Lead and Bromide

          Description The IRF8308MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:271.83 Kbytes 頁數(shù):10 Pages

          IRF

          IRF8308MTR1PBF

          RoHs Compliant Containing No Lead and Bromide

          Description The IRF8308MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:271.83 Kbytes 頁數(shù):10 Pages

          IRF

          IRF8308MTRPBF

          RoHs Compliant Containing No Lead and Bromide

          Description The IRF8308MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

          文件:277.13 Kbytes 頁數(shù):9 Pages

          IRF

          IRF830A

          Power MOSFET

          FEATURES ? Low Gate Charge QgResults in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available ?

          文件:969.36 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830A

          HEXFET Power MOSFET

          SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su

          文件:141.49 Kbytes 頁數(shù):8 Pages

          IRF

          技術(shù)參數(shù)

          • PC:

            100

          • ID:

            4.5

          • VDSS:

            500

          • Vth(min):

            2.0

          • RDS:

            1.5

          • VGS(RDS):

            10

          • Package:

            TO-220

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          INFINEON/英飛凌
          25+
          TO-220
          45000
          IR全新現(xiàn)貨IRF830即刻詢購立享優(yōu)惠#長期有排單訂
          詢價(jià)
          ST
          11+
          TO-220
          62000
          原裝正品現(xiàn)貨優(yōu)勢18
          詢價(jià)
          FSC/仙童
          24+
          TO-220
          7512
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
          詢價(jià)
          VISHAY
          23+
          TO-220
          2800
          原廠原裝正品
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          VISHAY
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          INFINEON/英飛凌
          19+
          明嘉萊只做原裝正品現(xiàn)貨
          2510000
          TOP-220
          詢價(jià)
          ONSEMI
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          25+
          PLCC44
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IR
          06+
          TO-220
          7000
          全新原裝 絕對(duì)有貨
          詢價(jià)
          更多IRF830供應(yīng)商 更新時(shí)間2026-1-18 9:03:00
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