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          首頁 >IRF830AS>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF830AS

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830AS

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:242.75 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830AS

          Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

          SMPS MOSFET Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Sup

          文件:155.1 Kbytes 頁數(shù):10 Pages

          IRF

          IRF830AS_V01

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:242.75 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRL

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRLPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

          文件:159.55 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF830ASTRLPBF

          N-Channel 6 50V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:2.23303 Mbytes 頁數(shù):10 Pages

          VBSEMI

          微碧半導體

          IRF830ASPBF

          HEXFET? Power MOSFET

          文件:665.92 Kbytes 頁數(shù):10 Pages

          IRF

          IRF830ASPBF

          Power MOSFET

          文件:242.75 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            3100mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±30V

          • Maximum Drain Source Voltage:

            500V

          • Maximum Continuous Drain Current:

            5A

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應商型號品牌批號封裝庫存備注價格
          IR
          2015+
          D2-Pak
          12500
          全新原裝,現(xiàn)貨庫存長期供應
          詢價
          IR
          24+
          D2-Pak
          8866
          詢價
          IR
          23+
          TO-263
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          IR
          25+23+
          TO-263
          28212
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          IR
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          IR
          2447
          D2-PAK
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          VISHAY
          25+
          TO-263
          3000
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          IR
          1923+
          TO-263
          6896
          原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
          詢價
          VBSEMI/臺灣微碧
          23+
          TO263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          IR
          25+
          TO-263
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          更多IRF830AS供應商 更新時間2026-1-21 11:04:00
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