N-channel mosfet transistor

Features ? With TO-220 package ? Simple drive requirements ? Fast switching ? VDSS=500V; RDS(ON)≤1.5Ω ;ID=4.5A ? 1.gate 2.drain 3.source

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ISC

無錫固電

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

High current, high speed switching

Description The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide super

文件：452.89 Kbytes 頁數(shù)：6 Pages

SILIKRON

新硅能微電子

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD

文件：225.25 Kbytes 頁數(shù)：4 Pages

SUNTAC

N-CHANNEL ENHANCEMENT MODE

Power Field Effect Transistor N?Channel Enhancement Mode ? Silicon Gate for Fast Switching Speeds ? Low RDS(on) to Minimize On?Losses, Specified at Elevated Temperature ? Rugged — SOA is Power Dissipation Limited ? Source?to?Drain Diode Characterized for Use with Inductive Loads

文件：282.47 Kbytes 頁數(shù)：3 Pages

TRSYS

Transys Electronics

N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 1.35? ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 1

文件：92.72 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導體

N-Channel PowerMESH MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY TM process. This technology matches and improves the performances compared with standard parts from varous sources. ● Typical RDS(on)=1.35 ? ● EXTREMELY HIGH dv/dt CAPABILITY ● 100 AVALAN

文件：625.73 Kbytes 頁數(shù)：7 Pages

ARTSCHIP

Power MOSFET

DESCRIPTION The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. FEATURES ? Dynamic

文件：670.19 Kbytes 頁數(shù)：7 Pages

KERSEMI

N-Channel Power MOSFET

DESCRIPTION The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device

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NELLSEMI

尼爾半導體

N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POW

文件：128.13 Kbytes 頁數(shù)：7 Pages

SYC