| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF710 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching; | Vishay 威世 | Vishay | |
IRF710 | Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB | NJS | NJS | |
HEXFET Power MOSFET Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 20V VGS Max. Gate Rating ● 100 tested for Rg Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters 文件：211.13 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：265.04 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：275.91 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：281.46 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fo 文件：350.86 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：169.18 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The 文件：273.24 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET(Vdss=50V) AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, these HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MO 文件：169.02 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
36000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
400V
- Maximum Continuous Drain Current：
2A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-220AB |
22412 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
25+ |
PLCC |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
24+/25+ |
26 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
25+ |
TO-220 |
22 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
06+ |
TO-220 |
8000 |
原裝庫存 |
詢價 | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
SEC |
23+ |
34-PCM |
5000 |
原裝正品,假一罰十 |
詢價 | ||
VISHAY/IR |
24+ |
原廠封裝 |
550 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
原裝 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
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