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          首頁 >IRF7101>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7101

          HEXFET Power MOSFET

          Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 20V VGS Max. Gate Rating ● 100 tested for Rg Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters

          文件:211.13 Kbytes 頁數(shù):10 Pages

          IRF

          IRF7101

          HEXFET Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:265.04 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7101

          20V 雙 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

          Infineon

          英飛凌

          IRF7101PBF

          HEXFET? Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:275.91 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7101TRPBF

          Adavanced Process Technology

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:281.46 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7101PBF_15

          ADVANCED PROCESS TECHNOLOGY

          文件:281.46 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7101TRPBF

          Dual N-Channel 20-V (D-S) MOSFET

          文件:1.73329 Mbytes 頁數(shù):7 Pages

          VBSEMI

          微碧半導(dǎo)體

          技術(shù)參數(shù)

          • Package?:

            SO-8

          • VDS?max:

            20.0V

          • RDS (on)?max:

            100.0m?

          • RDS (on)(@10V)?max:

            100.0m?

          • RDS (on)(@4.5V)?max:

            150.0m?

          • Polarity?:

            N+N

          • ID (@ TA=70°C)?max:

            2.3A

          • ID (@ TA=25°C)?max:

            3.5A

          • Ptot(@ TA=25°C)?max:

            2.0W

          • QG?:

            10.0nC?

          • RthJA?max:

            62.5K/W

          • Moisture Sensitivity Level?:

            1

          • Qgd(typ)?:

            2.4nC?

          • Tj?max:

            150.0°C

          • VGS?max:

            12.0V

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IOR
          24+
          SOP-8P
          8100
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
          詢價(jià)
          IR
          2021+
          SO-8
          9000
          原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
          詢價(jià)
          IR
          24+
          SOP-8
          8000
          只做原裝正品現(xiàn)貨
          詢價(jià)
          IOR
          2023+
          SOP-8P
          53500
          正品,原裝現(xiàn)貨
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          IR
          2025+
          SOP
          5000
          原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子!
          詢價(jià)
          IR
          23+
          SOP8
          5000
          絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
          詢價(jià)
          IR
          2015+
          3.9mm
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
          詢價(jià)
          24+
          SOP
          4312
          詢價(jià)
          IR
          25+
          PLCC
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          更多IRF7101供應(yīng)商 更新時(shí)間2026-1-19 10:55:00
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