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          首頁 >IRF710>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7103TR

          絲?。?a target="_blank" title="Marking" href="/irf7103/marking.html">IRF7103;Package:SOP-8;Dual N-Channel MOSFET

          Features * VDs (v= 50V * RDpsON)

          文件:420.2 Kbytes 頁數(shù):9 Pages

          UMW

          友臺半導(dǎo)體

          IRF7103TRPBF

          adavanced process technology

          Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

          文件:309.95 Kbytes 頁數(shù):10 Pages

          IRF

          IRF7104

          絲印:IRF7104;Package:SOP-8;-30V Dual P-Channel MOSFET

          Benefits ? VDS (V)= -30V ? ID = -2.3A ? RDS(ON)

          文件:682.91 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRF7104

          HEXFET Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:158.94 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7104PBF

          HEXFET Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:215.54 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7104TRPBF

          Advanced Process Technology

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:221.12 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7105

          Dual N P Channel MOSFET

          Features N-Ch: VDS (V)=25V RDS(ON)

          文件:452.89 Kbytes 頁數(shù):9 Pages

          EVVOSEMI

          翊歐

          IRF7105

          EVALUATION KIT

          INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

          文件:339.7 Kbytes 頁數(shù):18 Pages

          MICROSEMI

          美高森美

          IRF7105

          HEXFET POWER MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

          文件:271.1 Kbytes 頁數(shù):10 Pages

          IRF

          IRF7105PBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

          文件:302.21 Kbytes 頁數(shù):10 Pages

          IRF

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            36000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            400V

          • Maximum Continuous Drain Current:

            2A

          • Material:

            Si

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          onsemi(安森美)
          25+
          TO-220AB
          22412
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價
          IR
          2015+
          TO-220
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          25+
          PLCC
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          IR
          24+/25+
          26
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          IR
          25+
          TO-220
          22
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          06+
          TO-220
          8000
          原裝庫存
          詢價
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫存,長期供應(yīng)
          詢價
          SEC
          23+
          34-PCM
          5000
          原裝正品,假一罰十
          詢價
          VISHAY/IR
          24+
          原廠封裝
          550
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          24+
          原裝
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          更多IRF710供應(yīng)商 更新時間2026-1-18 22:59:00
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