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首頁(yè) >IRF710>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF7105PBF	文件：307.9 Kbytes Page：10 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：307.9 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRF7105QPBF	文件：319.49 Kbytes Page：10 Pages	HEXFET Power MOSFET DESCRIPTION These HEXFET?Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti 文件：319.49 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRF7105TR	文件：452.89 Kbytes Page：9 Pages	絲印：IRF7105；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件：452.89 Kbytes 頁(yè)數(shù)：9 Pages	EVVOSEMI 翊歐	EVVOSEMI
IRF7105TRPBF	文件：307.9 Kbytes Page：10 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：307.9 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRF7106	文件：158.65 Kbytes Page：7 Pages	Power MOSFET(Vdss=-20V) Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well know 文件：158.65 Kbytes 頁(yè)數(shù)：7 Pages	IRF	IRF
IRF7107	文件：160.79 Kbytes Page：7 Pages	HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well know 文件：160.79 Kbytes 頁(yè)數(shù)：7 Pages	IRF	IRF
IRF710-713	文件：147.35 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 2.25A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. ? Low RDS(on) ? VGS Rated at ±20 V 文件：147.35 Kbytes 頁(yè)數(shù)：5 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF710A	文件：226.65 Kbytes Page：7 Pages	Advanced Power MOSFET (400V, 3.6ohm, 2A) FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 400V ? Low RDS(ON): 2.815? (Typ.) 文件：226.65 Kbytes 頁(yè)數(shù)：7 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF710A	文件：46.38 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor ? DESCRITION ? designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. ? FEATU 文件：46.38 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
IRF710B	文件：859.15 Kbytes Page：10 Pages	400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：859.15 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD

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技術(shù)參數(shù)

Minimum Operating Temperature：
-55°C
Maximum Power Dissipation：
36000mW
Maximum Operating Temperature：
150°C
Maximum Gate Source Voltage：
±20V
Maximum Drain Source Voltage：
400V
Maximum Continuous Drain Current：
2A
Material：
Si
Configuration：
Single
Channel Type：
N
Channel Mode：
Enhancement
Category：
Power MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市高捷芯城科技有限公司	IRF710	onsemi(安森美)	25+	TO-220AB	22412	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢(xún)價(jià)
深圳市福田區(qū)綠盛電子商行	IRF710	IR	2015+	TO-220	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!	詢(xún)價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	IRF710	IR	25+	PLCC	18000	原廠直接發(fā)貨進(jìn)口原裝	詢(xún)價(jià)
深圳市聯(lián)世界科技有限公司	IRF710	IR	24+/25+		26	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢(xún)價(jià)
深圳市卓越微芯電子有限公司	IRF710	IR	25+	TO-220	22	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢(xún)價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRF710	IR	06+	TO-220	8000	原裝庫(kù)存	詢(xún)價(jià)
深圳市勤思達(dá)科技有限公司	IRF710	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢(xún)價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRF710	SEC	23+	34-PCM	5000	原裝正品,假一罰十	詢(xún)價(jià)
深圳市弘為電子有限公司	IRF710	VISHAY/IR	24+	原廠封裝	550	原裝現(xiàn)貨假一罰十	詢(xún)價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRF710	IR	24+	原裝	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢(xún)價(jià)

更多IRF710供應(yīng)商更新時(shí)間2026-1-18 22:59:00

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