Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：169.18 Kbytes 頁數(shù)：9 Pages

IRF

絲?。?strong>IRF7103；Package：SOP-8；Dual N-Channel MOSFET

Features * VDs (v= 50V * RDpsON)

文件：420.2 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體

50V 雙 N 通道 IR MOSFET ?采用 SO-8 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 雙 N 通道 MOSFET;

Infineon

英飛凌

HEXFET Power MOSFET

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：273.24 Kbytes 頁數(shù)：9 Pages

IRF

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, these HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MO

文件：169.02 Kbytes 頁數(shù)：10 Pages

IRF

adavanced process technology

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：309.95 Kbytes 頁數(shù)：10 Pages

IRF

HEXFET Power MOSFET

文件：263.4 Kbytes 頁數(shù)：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes 頁數(shù)：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes 頁數(shù)：9 Pages

IRF

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes 頁數(shù)：9 Pages

IRF