Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：237.05 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-channel 200V - 0.15廓 - 15A - TO-220 MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources General features ■ Extremely high dv/dt capability ■ Gate charge minimize

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STMICROELECTRONICS

意法半導體

N-Channel MOSFET uses advanced trench technology

文件：1.13916 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導體