| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF644 | 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：900.35 Kbytes 頁數(shù)：10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
IRF644 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：1.64378 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF644 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：154.67 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF644 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applicat 文件：173.37 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRF644 | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：123.93 Kbytes 頁數(shù)：11 Pages | IRF | IRF | |
IRF644 | N-Channel Mosfet Transistor 文件：205.89 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF644 | SEMICONDUCTORS 文件：2.43533 Mbytes 頁數(shù)：31 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
IRF644 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching; | Vishay 威世 | Vishay | |
IRF644 | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：154.67 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號：
IRF644
- 功能描述：
MOSFET N-Chan 250V 14 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價(jià)IRF644即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161323 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
12+ |
TO-263 |
45 |
詢價(jià) | |||
IR |
06+ |
TO-220 |
6000 |
自己公司全新庫存絕對有貨 |
詢價(jià) | ||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價(jià) | ||
IR |
25+ |
TO220 |
28 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
FAIRCHILD |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) |
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