Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

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VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

Features ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175 Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS= 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.)

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FAIRCHILD

仙童半導(dǎo)體

N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

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FS

N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

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FS

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET ■ TYPICAL RDS(on) = 0.050 ? ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZA

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STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel Mosfet Transistor

DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

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ISC

無錫固電

N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

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FS

Advanced Process Technology

VDSS = 100V RDS(on) = 44m? ID = 33A Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance througho

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KERSEMI

N-Channel Mosfet Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.044? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operat

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ISC

無錫固電

33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET

Features ? Ultra Low On-Resistance - rDS(ON)= 0.040Ω, VGS=10V ? Simulation Models - Temperature Compensated PSPICE? and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com ? Peak Current vs Pulse Width Curve ? UIS Rating Curve

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FAIRCHILD

仙童半導(dǎo)體