N-Channel Power MOSFETs, 27 A, 60-100V

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FAIRCHILD

仙童半導體

N-channel TrenchMOS transistor

VDSS = 100 V ID = 23 A RDS(ON) ≤ 77 m? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. t

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PHI

PHI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

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VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 1. Dynamic dv/dt Rating 2. Repetitive Avalanche Rated 3. 175°C Operating Temperature

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IRF

isc N-Channel Mosfet Transistor

DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

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ISC

無錫固電

N-Channel Power MOSFETs, 27 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET ■ TYPICAL RDS(on) = 0.050 ? ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZA

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STMICROELECTRONICS

意法半導體

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 77mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for hi

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ISC

無錫固電