N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

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FS

isc N-Channel Mosfet Transistor

DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

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ISC

無(wú)錫固電

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET ■ TYPICAL RDS(on) = 0.050 ? ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZA

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STMICROELECTRONICS

意法半導(dǎo)體

MOS FET:Low Voltage

First Silicon