Advanced Power MOSFET

Features ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175 Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS= 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.)

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FAIRCHILD

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SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

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isc N-Channel MOSFET Transistor

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ISC

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Advanced Power MOSFET

■ Avalanche Rugged Technology\n■ Rugged Gate Oxide Technology\n■ Lower Input Capacitance\n■ Improved Gate Charge\n■ Extended Safe Operating Area\n■ 175 Operating Temperature\n■ Lower Leakage Current : 10 μA (Max.) @ VDS= 100V\n■ Lower RDS(ON) : 0.041 Ω(Typ.);

ONSEMI

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