Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

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IRF

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：188.81 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel MOSFET

■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON)

文件：2.46446 Mbytes 頁(yè)數(shù)：6 Pages

KEXIN

科信電子

HEXFET? Power MOSFET

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

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IRF

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；N-Channel 100-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFETS ? 175 °C Junction Temperature ? Low Thermal Resistance Package

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VBSEMI

微碧半導(dǎo)體

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：6.94774 Mbytes 頁(yè)數(shù)：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.90441 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

文件：2.15994 Mbytes 頁(yè)數(shù)：7 Pages

IRF

N-channel TrenchMOS transistor

VDSS = 100 V ID = 23 A RDS(ON) ≤ 77 m? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. t

文件：86.08 Kbytes 頁(yè)數(shù)：9 Pages

PHI

PHI

Power MOSFET

FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datas

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VISHAYVishay Siliconix

威世威世科技公司