| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET VDSS = 100V RDS(on) = 26.5m? ID = 36A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te 文件：310.12 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：301.17 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
AUTOMOTIVE MOSFET VDSS = 100V RDS(on) = 26.5m? ID = 36A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te 文件：349.55 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 100V RDS(on) = 26.5m? ID = 36A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te 文件：349.55 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
N-Channel 100-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature ? Low Thermal Resistance Package ? 100 Rg Tested APPLICATIONS ? Isolated DC/DC Converters 文件：1.63385 Mbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
AUTOMOTIVE MOSFET VDSS = 100V RDS(on) = 26.5m? ID = 36A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te 文件：310.12 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：189.48 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
AUTOMOTIVE MOSFET VDSS = 100V RDS(on) = 26.5m? ID = 36A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te 文件：349.55 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
N-CHANNEL 100V - 0.055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET 文件：311.12 Kbytes 頁數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Power MOSFET 文件：282.81 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- PC：
2.0
- ID：
27
- VDSS：
100
- Vth(min)：
2
- RDS：
80
- VGS(RDS)：
10
- Package：
TO-220F
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-220 |
19851 |
自主品牌 量大可定 |
詢價 | ||
VISHAY/威世 |
25+ |
TO-220 |
45000 |
VISHAY/威世全新現(xiàn)貨IRF540即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
25+ |
10000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
IR |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
24+ |
TO-220 |
15800 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO220 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 | ||
英飛凌 |
24+ |
5000 |
全新、原裝 |
詢價 | |||
onsemi(安森美) |
25+ |
TO-220AB |
11543 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
SEC |
25+ |
標(biāo)準(zhǔn)封裝 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 |
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