| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：IRF5305；Package：TO-220；-60V P-Channel MOSFET Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON) 文件：723.45 Kbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf5305s/marking.html">IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件：3.58041 Mbytes 頁(yè)數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/irf5305s/marking.html">IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON) 文件：1.48095 Mbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?strong>IRF5305；Package：TO-220；-60V P-Channel MOSFET Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON) 文件：723.45 Kbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf5305s/marking.html">IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件：3.58041 Mbytes 頁(yè)數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON) 文件：1.48095 Mbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
IRF5305 | -55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件：3.58041 Mbytes 頁(yè)數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRF5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr 文件：124.32 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | |
IRF5305 | Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：3.15583 Mbytes 頁(yè)數(shù)：8 Pages | KERSEMI | KERSEMI | |
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte 文件：1.22797 Mbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI |
詳細(xì)參數(shù)
- 型號(hào)：
IRF5305
- 功能描述：
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列全新原裝正品,現(xiàn)貨供應(yīng)IRF5305PBF,IRF5305STR,正品現(xiàn)貨供應(yīng),歡迎咨詢(xún)洽談。 |
詢(xún)價(jià) | ||
IR |
25+ |
TO-220 |
9600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
INFINEON/IR |
1907+ |
NA |
5400 |
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨 |
詢(xún)價(jià) | ||
INFINEON |
22+ |
TO-220 |
12000 |
原裝正品可支持驗(yàn)貨,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
IR |
24+ |
TO-220AB |
10000 |
只做原裝歡迎含稅交易,假一賠十,放心購(gòu)買(mǎi) |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
25+ |
TO-220-3 |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開(kāi)票 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-220 |
15000 |
全新原裝的現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
13 |
TO-220 |
15000 |
進(jìn)口原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) | ||
IR |
16+ |
TO-220 |
36000 |
原裝正品,優(yōu)勢(shì)庫(kù)存81 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-220AB |
65400 |
詢(xún)價(jià) |
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