絲印：IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

絲印：IRF7401；Package：SOP-8；N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：416.88 Kbytes 頁數(shù)：24 Pages

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亞德諾

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：279.17 Kbytes 頁數(shù)：22 Pages

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亞德諾

Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：118.89 Kbytes 頁數(shù)：9 Pages

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