| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7204 | 絲?。?strong>IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m 文件：1.04499 Mbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
絲?。?strong>IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET Features: RDS(ON) 文件：1.52782 Mbytes 頁數(shù)：7 Pages | UMW 友臺半導體 | UMW | ||
IRF7204 | 絲印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m 文件：1.04499 Mbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
絲印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET Features: RDS(ON) 文件：1.52782 Mbytes 頁數(shù)：7 Pages | UMW 友臺半導體 | UMW | ||
IRF7204 | Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A) Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for 文件：145.18 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
HEXFET? Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：243.67 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：249.27 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：249.27 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Adavanced Process Technology 文件：249.27 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
P-Channel 20-V (D-S) MOSFET 文件：2.01837 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導體 | VBSEMI |
詳細參數(shù)
- 型號：
IRF7204
- 功能描述：
MOSFET P-CH 20V 5.3A 8-SOIC
- RoHS：
否
- 類別：
分離式半導體產品 >> FET - 單
- 系列：
HEXFET®
- 標準包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應商設備封裝：
TO-220FP
- 包裝：
管件
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
SOP8 |
10000 |
只有原裝 |
詢價 | ||
42 |
8 |
IR |
4 |
92 |
詢價 | ||
IR |
25+ |
SOP-8 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IOR |
24+ |
SOP |
240 |
詢價 | |||
IOR |
99+ |
SOP8 |
1335 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
IOR |
25+ |
SOP8 |
2500 |
強調現(xiàn)貨,隨時查詢! |
詢價 | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2016+ |
SOP8 |
3280 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |
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