N-CHANNEL POWER MOSFETS

FEATURES ? Low Rds(on) ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High voltage)

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SAMSUNG

三星

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

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INTERSIL

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ? Fast switching times ? Low RDS(on) HDMOS? process ? Rugged polysilicon gate cell structure ? Excellent high voltage stability ? Low input capacitance ? Improved high temperature reliability APPLICATIONS: ? Switching power supplies ? Motor controls ? Audio Amplifiers ? Invert

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IXYS

艾賽斯

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·

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ISC

無(wú)錫固電

N-CHANNE POWER MOSFETS

FEATURES ? Low Rds(on) ) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High v

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

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NELLSEMI

尼爾半導(dǎo)體

N-CHANNEL POWER MOSFET

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SEME-LAB

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor d ? 30A, 200V\n? rDS(ON) = 0.085?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞薩

MOSFETs and JFETs

TT Electronics