N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

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FAIRCHILD

仙童半導體

N-CHANNEL POWER MOSFET

FEATURES ? Low RDs

文件：211.06 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

Static Drain-Source On-Resistance

DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors

文件：48.28 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

Part Number BVDSS RDS(on) ID IRF240 200V 0.18? 18A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

文件：101.73 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

REPETITIVE AVALANCHE AND dv/dt RATED

Part Number BVDSS RDS(on) ID IRF240 200V 0.18? 18A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state res

文件：149.25 Kbytes 頁數(shù)：7 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：19.38 Kbytes 頁數(shù)：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes 頁數(shù)：3 Pages

SEME-LAB

18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

文件：59.29 Kbytes 頁數(shù)：7 Pages

INTERSIL

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Repetitive Avalanche Ratings

文件：150.3 Kbytes 頁數(shù)：7 Pages

IRF