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          首頁 >IRF2807>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF2807

          Power MOSFET(Vdss=75V, Id=82A??

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:207.45 Kbytes 頁數(shù):8 Pages

          IRF

          IRF2807

          Advanced Process Technology

          Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

          文件:768.71 Kbytes 頁數(shù):8 Pages

          KERSEMI

          IRF2807

          SEMICONDUCTORS

          文件:2.43533 Mbytes 頁數(shù):31 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          IRF2807

          N-Channel MOSFET Transistor

          文件:338.77 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF2807

          采用 TO-220 封裝的 75V 單 N 溝道功率 MOSFET

          \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n?\n ?;

          Infineon

          英飛凌

          IRF2807L

          Advanced Process Technology

          Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

          文件:1.1772 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRF2807L

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:134.58 Kbytes 頁數(shù):10 Pages

          IRF

          IRF2807L

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:269.4 Kbytes 頁數(shù):10 Pages

          IRF

          IRF2807LPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:269.4 Kbytes 頁數(shù):10 Pages

          IRF

          IRF2807LPBF

          Advanced Process Technology Ultra Low On-Resistance

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:4.24691 Mbytes 頁數(shù):10 Pages

          KERSEMI

          技術(shù)參數(shù)

          • OPN:

            IRF2807PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            75 V

          • RDS (on) @10V max:

            13 m?

          • ID @25°C max:

            82 A

          • QG typ @10V:

            106.7 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          13+
          TO-220/TO-263
          10000
          深圳市勤思達(dá)科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF2807,全新原裝,正品供應(yīng)。
          詢價
          INFINEON/英飛凌
          25+
          TO-220
          20300
          INFINEON/英飛凌原裝特價IRF2807即刻詢購立享優(yōu)惠#長期有貨
          詢價
          IR
          23+
          TO220AB
          56000
          詢價
          IR
          24+
          TO 220
          161152
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          24+
          TO-220
          48650
          原裝正品 特價現(xiàn)貨(香港 新加坡 日本)
          詢價
          IR
          2012
          TO-220
          5
          全新原裝正品現(xiàn)貨
          詢價
          IR
          1200
          盈芯辭舊,利信E界,進(jìn)口原裝現(xiàn)貨,質(zhì)量保證。
          詢價
          IR
          2015+
          SOP/DIP
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          06+
          TO-220
          8000
          自己公司全新庫存絕對有貨
          詢價
          更多IRF2807供應(yīng)商 更新時間2026-1-20 11:03:00
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