| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF2804 | HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | |
IRF2804 | Advanced Process Technology 文件：285.49 Kbytes 頁(yè)數(shù)：13 Pages | IRF | IRF | |
IRF2804 | N-Channel MOSFET Transistor 文件：339.11 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF2804 | 采用 TO-220 封裝的 40V 單 N 溝道功率 MOSFET \n優(yōu)勢(shì):\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 快速開關(guān)\n? 175°C 的工作溫度\n?\n ?; | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：771.44 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：771.44 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 40V RDS(on) = 1.6m? ID = 160A Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：263.09 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET VDSS = 40V RDS(on) = 1.6m? ID = 160A Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：668.37 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF2804PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
2.3 m?
- ID @25°C max：
270 A
- QG typ @10V：
160 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO-220 |
45000 |
INFINEON/英飛凌全新現(xiàn)貨IRF2804即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
18961 |
公司優(yōu)勢(shì)庫(kù)存熱賣全新原裝!歡迎來電 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
TO-220 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
05+ |
TO-220 |
5000 |
自己公司全新庫(kù)存絕對(duì)有貨 |
詢價(jià) | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
18+ |
TO-220 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
IR |
2022+ |
14 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
24+ |
TO-252 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) |
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