| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：696.52 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁(yè)數(shù)：13 Pages | IRF | IRF | ||
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：127.66 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：159.79 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：578.95 Kbytes 頁(yè)數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A ) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：258.07 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件：167.92 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：159.79 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：578.95 Kbytes 頁(yè)數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- OPN：
IRF1404PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
4 m?
- ID @25°C max：
202 A
- QG typ @10V：
131 nC
- Special Features：
Wide SOA
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
VQFN |
7850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-3 |
10000 |
詢價(jià) | |||
MOT |
05+ |
原廠原裝 |
4236 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR/MOT |
24+ |
TO-3 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
25+ |
TO-3 |
30 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
Magnatec |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
UNMARKED |
新 |
11 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
23+ |
NA |
113 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
25+23+ |
TO-3 |
20899 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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