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          首頁 >IRF140>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF1404PBF

          HEXFET? Power MOSFET

          Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

          文件:201.83 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1404PBF

          Advanced Process Technology

          Description Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

          文件:3.45272 Mbytes 頁數(shù):9 Pages

          KERSEMI

          IRF1404S

          Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

          Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

          文件:306.92 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1404S

          Ultra Low On-Resistance

          Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

          文件:1.19651 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRF1404S

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

          文件:329.6 Kbytes 頁數(shù):12 Pages

          IRF

          IRF1404SPBF

          HEXFET? Power MOSFET

          Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

          文件:3.89112 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRF1404SPBF

          HEXFET? Power MOSFET

          Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

          文件:279.7 Kbytes 頁數(shù):11 Pages

          IRF

          IRF1404STRLPBF

          Advanced Process Technology

          Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

          文件:279.7 Kbytes 頁數(shù):11 Pages

          IRF

          IRF1404Z

          N-Channel MOSFET

          ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON)

          文件:2.53346 Mbytes 頁數(shù):6 Pages

          KEXIN

          科信電子

          IRF1404Z

          AUTOMOTIVE MOSFET Advanced Process Technology

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

          文件:4.6855 Mbytes 頁數(shù):12 Pages

          KERSEMI

          技術(shù)參數(shù)

          • OPN:

            IRF1404PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            4 m?

          • ID @25°C max:

            202 A

          • QG typ @10V:

            131 nC

          • Special Features:

            Wide SOA

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          VQFN
          7850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          IR
          24+
          TO-3
          10000
          詢價
          MOT
          05+
          原廠原裝
          4236
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          IR/MOT
          24+
          TO-3
          1000
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          25+
          TO-3
          30
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          Magnatec
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          UNMARKED
          11
          全新原裝 貨期兩周
          詢價
          IR
          23+
          NA
          113
          專做原裝正品,假一罰百!
          詢價
          IR
          25+23+
          TO-3
          20899
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          更多IRF140供應(yīng)商 更新時間2026-1-20 17:57:00
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