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首頁 >IRF140>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IRF1404ZS_L	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 頁數(shù)：12 Pages	KERSEMI	KERSEMI
IRF1404ZSPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1404ZSPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1404ZSTRLPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1405	文件：3.36263 Mbytes Page：9 Pages	Electric Power Steering (EPS) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：3.36263 Mbytes 頁數(shù)：9 Pages	KERSEMI	KERSEMI
IRF1405	文件：116.43 Kbytes Page：9 Pages	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe 文件：116.43 Kbytes 頁數(shù)：9 Pages	IRF	IRF
IRF1405L	文件：154.79 Kbytes Page：11 Pages	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 頁數(shù)：11 Pages	IRF	IRF
IRF1405L	文件：3.92361 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 頁數(shù)：11 Pages	KERSEMI	KERSEMI
IRF1405LPBF	文件：240.27 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1405PBF	文件：207.62 Kbytes Page：9 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 5.3m? ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS 文件：207.62 Kbytes 頁數(shù)：9 Pages	IRF	IRF

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技術(shù)參數(shù)

OPN：
IRF1404PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
4 m?
ID @25°C max：
202 A
QG typ @10V：
131 nC
Special Features：
Wide SOA
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市科恒偉業(yè)電子有限公司	IRF140	IR	24+	VQFN	7850	只做原裝正品現(xiàn)貨或訂貨假一賠十!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF140	IR	24+	TO-3	10000		詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRF140	MOT	05+	原廠原裝	4236	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市弘為電子有限公司	IRF140	IR/MOT	24+	TO-3	1000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	IRF140	IR	25+	TO-3	30	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市福田區(qū)綠盛電子商行	IRF140	IR	2015+	TO-3(鐵帽)	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市達(dá)恩科技有限公司	IRF140	Magnatec	24+	NA	3000	進(jìn)口原裝正品優(yōu)勢供應(yīng)	詢價(jià)
上海金慶電子技術(shù)有限公司	IRF140	UNMARKED	新		11	全新原裝貨期兩周	詢價(jià)
深圳市振宏微科技有限公司	IRF140	IR	23+	NA	113	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	IRF140	IR	25+23+	TO-3	20899	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)

更多IRF140供應(yīng)商更新時(shí)間2026-1-21 18:05:00

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