| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：696.52 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁數(shù)：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁數(shù)：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF1404PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
4 m?
- ID @25°C max：
202 A
- QG typ @10V：
131 nC
- Special Features：
Wide SOA
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
VQFN |
7850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-3 |
10000 |
詢價(jià) | |||
MOT |
05+ |
原廠原裝 |
4236 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR/MOT |
24+ |
TO-3 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
25+ |
TO-3 |
30 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
Magnatec |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
IR |
23+ |
NA |
113 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
25+23+ |
TO-3 |
20899 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
18+ |
TO220 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
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- NE5532A
- NE5532A
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相關(guān)庫存
更多- NE5532
- NE5532
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- MAX232
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- NE5533
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- SI7913DN
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- SI7911DN
- SI7900EDN
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- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
